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SI3456CDV-T1-E3N-Channel 30 V 7.7A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP

1:$0.1080

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SI3456-109256
ManufacturerVishay Siliconix
MPN #.SI3456CDV-T1-E3
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetSI3456CDV(PDF)
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In Stock: 12
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 0.1080
Ext. Price$ 0.1080
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
3000$0.1080$324.0000
6000$0.1020$612.0000
9000$0.0950$855.0000
30000$0.0930$2790.0000
75000$0.0900$6750.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesTrenchFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberSI3456
Continuous Drain Current (ID) @ 25°C7.7A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)12 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)460 pF @ 15 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2W (Ta), 3.3W (Tc)
RDS(on) Drain-to-Source On Resistance34mOhm @ 6.1A, 10V
Package Type (Mfr.)6-TSOP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseSOT-23-6 Thin, TSOT-23-6
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
SI3456CDV
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)