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SI3440ADV-T1-GE3N-Channel 150 V 2.2A (Tc) 3.6W (Tc) Surface Mount 6-TSOP
1:$0.3610
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SI3440-96644
ManufacturerVishay Siliconix
MPN #.SI3440ADV-T1-GE3
Estimated Lead Time34 Weeks
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DatasheetSI3440ADV(PDF)
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In Stock: 7841
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 0.3610
Ext. Price$ 0.3610
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3610$0.3610
10$0.2820$2.8200
100$0.1690$16.9000
500$0.1570$78.5000
1000$0.1070$107.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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P-Channel 60 V 16A (Tc) 53W (Tc) Surface Mount PowerPAK® 1212-8 Technical Specifications
SeriesTrenchFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSI3440
Continuous Drain Current (ID) @ 25°C2.2A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))7.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)4 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)80 pF @ 75 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.6W (Tc)
RDS(on) Drain-to-Source On Resistance380mOhm @ 1.5A, 10V
Package Type (Mfr.)6-TSOP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseSOT-23-6 Thin, TSOT-23-6
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)