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SI3421DV-T1-GE3P-Channel 30 V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

1:$0.4020

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SI3421-170171
ManufacturerVishay Siliconix
MPN #.SI3421DV-T1-GE3
Estimated Lead Time18 Weeks
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DatasheetDatasheetSI3421DV(PDF)
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In Stock: 13616
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 7, 2024
* Quantity
Unit Price$ 0.4020
Ext. Price$ 0.4020
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.4020$0.4020
10$0.3400$3.4000
100$0.2370$23.7000
500$0.1850$92.5000
1000$0.1500$150.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesTrenchFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSI3421
Continuous Drain Current (ID) @ 25°C8A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)69 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2580 pF @ 15 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2W (Ta), 4.2W (Tc)
RDS(on) Drain-to-Source On Resistance19.2mOhm @ 7A, 10V
Package Type (Mfr.)6-TSOP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseSOT-23-6 Thin, TSOT-23-6
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)