Image is for reference only, the actual product serves as the standard.
IRLU110PBFN-Channel 100 V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Through Hole TO-251AA

1:$0.8120

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRLU11-50645
ManufacturerVishay Siliconix
MPN #.IRLU110PBF
Estimated Lead Time14 Weeks
SampleGet Free Sample
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 4943
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 0.8120
Ext. Price$ 0.8120
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.8120$0.8120
75$0.6510$48.8250
150$0.5160$77.4000
525$0.4380$229.9500
1050$0.4320$453.6000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
Mosfet Array 12V 1.3A 1.25W Surface Mount SC-70-6
N-Channel 60 V 2A (Ta) 1.25W (Ta) Surface Mount SOT-23-3 (TO-236)
N-Channel 30 V 9A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8
Mosfet Array 100V 1.8A 1.3W Surface Mount PowerPAK® 1212-8 Dual
N-Channel 600 V 30A (Tc) 208W (Tc) Surface Mount TO-263 (D2PAK)
Mosfet Array 20V 16A, 35A 27W, 48W Surface Mount 6-PowerPair™
P-Channel 60 V 16A (Tc) 53W (Tc) Surface Mount PowerPAK® 1212-8
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIRLU110
Continuous Drain Current (ID) @ 25°C4.3A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4V, 5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)6.1 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)250 pF @ 25 V
MfrVishay Siliconix
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 25W (Tc)
RDS(on) Drain-to-Source On Resistance540mOhm @ 2.6A, 5V
Package Type (Mfr.)TO-251AA
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)