IRLI640GPBFN-Channel 200 V 9.9A (Tc) 40W (Tc) Through Hole TO-220-3
1:$2.5820
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRLI64-100028
ManufacturerVishay Siliconix
MPN #.IRLI640GPBF
Estimated Lead Time14 Weeks
SampleGet Free Sample
Datasheet
IRLI640G(PDF)
IRLI640G(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 2.5820
Ext. Price$ 2.5820
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.5820$2.5820
50$2.0460$102.3000
100$1.7530$175.3000
500$1.5590$779.5000
1000$1.3350$1335.0000
2000$1.2560$2512.0000
5000$1.2060$6030.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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P-Channel 60 V 16A (Tc) 53W (Tc) Surface Mount PowerPAK® 1212-8 Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIRLI640
Continuous Drain Current (ID) @ 25°C9.9A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4V, 5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)66 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1800 pF @ 25 V
MfrVishay Siliconix
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation40W (Tc)
RDS(on) Drain-to-Source On Resistance180mOhm @ 5.9A, 5V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-220-3 Full Pack, Isolated Tab
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PCN Design/Specification
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)