IRLD014PBFN-Channel 60 V 1.7A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
1:$1.2070
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRLD01-200854
ManufacturerVishay Siliconix
MPN #.IRLD014PBF
Estimated Lead Time-
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Datasheet
IRLD014(PDF)
IRLD014(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 7, 2024
* Quantity
Unit Price$ 1.2070
Ext. Price$ 1.2070
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.2070$1.2070
10$0.9870$9.8700
100$0.7680$76.8000
500$0.6510$325.5000
1000$0.5300$530.0000
2000$0.4990$998.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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P-Channel 60 V 16A (Tc) 53W (Tc) Surface Mount PowerPAK® 1212-8 Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusEnd of Life (EOL)
Base Product NumberIRLD014
Continuous Drain Current (ID) @ 25°C1.7A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4V, 5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)8.4 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)400 pF @ 25 V
MfrVishay Siliconix
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1.3W (Ta)
RDS(on) Drain-to-Source On Resistance200mOhm @ 1A, 5V
Package Type (Mfr.)4-HVMDIP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / Case4-DIP (0.300", 7.62mm)
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)