IRL620PBFN-Channel 200 V 5.2A (Tc) 50W (Tc) Through Hole TO-220AB
1:$1.3910
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRL620-228661
ManufacturerVishay Siliconix
MPN #.IRL620PBF
Estimated Lead Time-
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Datasheet
IRLZ44(PDF)
IRLZ44(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 7, 2024
* Quantity
Unit Price$ 1.3910
Ext. Price$ 1.3910
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.3910$1.3910
50$1.1170$55.8500
100$0.9190$91.9000
500$0.7780$389.0000
1000$0.6600$660.0000
2000$0.6260$1252.0000
5000$0.6030$3015.0000
10000$0.5840$5840.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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P-Channel 60 V 16A (Tc) 53W (Tc) Surface Mount PowerPAK® 1212-8 Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusEnd of Life (EOL)
Base Product NumberIRL620
Continuous Drain Current (ID) @ 25°C5.2A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4V, 5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)16 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)360 pF @ 25 V
MfrVishay Siliconix
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation50W (Tc)
RDS(on) Drain-to-Source On Resistance800mOhm @ 3.1A, 5V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-220-3
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Datasheets
PCN Assembly/Origin
PCN Obsolescence/ EOL
Product Drawings
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)