IRFPC50AN-Channel 600 V 11A (Tc) 180W (Tc) Through Hole TO-247AC
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ABRmicro #.ABR2045-IRFPC5-31675
ManufacturerVishay Siliconix
MPN #.IRFPC50A
Estimated Lead Time-
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 6, 2024
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Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIRFPC50
Continuous Drain Current (ID) @ 25°C11A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)70 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2100 pF @ 25 V
MfrVishay Siliconix
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation180W (Tc)
RDS(on) Drain-to-Source On Resistance580mOhm @ 6A, 10V
Package Type (Mfr.)TO-247AC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-247-3
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info@Abrmicro.com Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)