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IRFL9014TRP-Channel 60 V 1.8A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

1:$1.8490

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-IRFL90-3956
ManufacturerVishay Siliconix
MPN #.IRFL9014TR
Estimated Lead Time-
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DatasheetDatasheetIRFL9014 (PDF)
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In Stock: 9
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateDecember 24, 2024
* Quantity
Unit Price$1.8490
Ext. Price$1.8490
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
2500$1.8490$4621.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberIRFL9014
Continuous Drain Current (ID) @ 25°C1.8A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)12 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)270 pF @ 25 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2W (Ta), 3.1W (Tc)
RDS(on) Drain-to-Source On Resistance500mOhm @ 1.1A, 10V
Package Type (Mfr.)SOT-223
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-261-4, TO-261AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IRFL9014
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The IRFL9014TR by Vishay Siliconix is a P-Channel MOSFET designed for surface-mount applications, housed in a SOT-223 package. It features a voltage rating of 60V and can handle a current of 1.8A at its case temperature (Tc). The maximum power dissipation is 2W when mounted on a standard ambient and 3.1W at case temperature. The gate-source voltage is rated at ±20V, and it offers a low on-resistance of 500 milliohms when operating at 1.1A with a gate voltage of 10V. The gate threshold voltage is specified at 4V with a drain current of 250µA.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.