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IRFL110PBFN-Channel 100 V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

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ABRmicro #.ABR2045-IRFL11-60328
ManufacturerVishay Siliconix
MPN #.IRFL110PBF
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetIRFL110, SiHFL110(PDF)
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In Stock: 19
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 6, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIRFL110
Continuous Drain Current (ID) @ 25°C1.5A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)8.3 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)180 pF @ 25 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2W (Ta), 3.1W (Tc)
RDS(on) Drain-to-Source On Resistance540mOhm @ 900mA, 10V
Package Type (Mfr.)SOT-223
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-261-4, TO-261AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IRFL110, SiHFL110
PCN Obsolescence/ EOL
SOT-223 Tube Package 02/Jul/2015
PCN Part Status Change
Mult Tube Dev OBS 2/Jul/2015
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)