IRFI9Z24GPBFP-Channel 60 V 8.5A (Tc) 37W (Tc) Through Hole TO-220-3
1:$1.6550
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRFI9Z-241207
ManufacturerVishay Siliconix
MPN #.IRFI9Z24GPBF
Estimated Lead Time14 Weeks
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Datasheet
IRFI9Z24G(PDF)
IRFI9Z24G(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 7, 2024
* Quantity
Unit Price$ 1.6550
Ext. Price$ 1.6550
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
50$1.6550$82.7500
100$1.3610$136.1000
250$1.3270$331.7500
500$1.1510$575.5000
1250$0.9770$1221.2500
2500$0.9280$2320.0000
5000$0.8930$4465.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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P-Channel 60 V 16A (Tc) 53W (Tc) Surface Mount PowerPAK® 1212-8 Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIRFI9
Continuous Drain Current (ID) @ 25°C8.5A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)19 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)570 pF @ 25 V
MfrVishay Siliconix
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation37W (Tc)
RDS(on) Drain-to-Source On Resistance280mOhm @ 5.1A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3 Full Pack, Isolated Tab
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PCN Design/Specification
Product Drawings
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)