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IRFI644GPBFN-Channel 250 V 7.9A (Tc) 40W (Tc) Through Hole TO-220-3

1:$2.2850

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRFI64-24667
ManufacturerVishay Siliconix
MPN #.IRFI644GPBF
Estimated Lead Time14 Weeks
SampleGet Free Sample
DatasheetDatasheetIRFI644G(PDF)
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In Stock: 2867
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 5, 2024
* Quantity
Unit Price$ 2.2850
Ext. Price$ 2.2850
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.2850$2.2850
50$1.8350$91.7500
100$1.5090$150.9000
500$1.2770$638.5000
1000$1.0840$1084.0000
2000$1.0300$2060.0000
5000$0.9910$4955.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIRFI644
Continuous Drain Current (ID) @ 25°C7.9A (Tc)
Drain-to-Source Voltage (VDS)250 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)68 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1300 pF @ 25 V
MfrVishay Siliconix
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation40W (Tc)
RDS(on) Drain-to-Source On Resistance280mOhm @ 4.7A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3 Full Pack, Isolated Tab
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)