IRFI530GPBFN-Channel 100 V 9.7A (Tc) 42W (Tc) Through Hole TO-220-3
1:$1.4880
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRFI53-23056
ManufacturerVishay Siliconix
MPN #.IRFI530GPBF
Estimated Lead Time14 Weeks
SampleGet Free Sample
Datasheet
IRFI530G,SiHFI530G(PDF)
IRFI530G,SiHFI530G(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
* Quantity
Unit Price$ 1.4880
Ext. Price$ 1.4880
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.4880$1.4880
50$1.1940$59.7000
100$0.9830$98.3000
500$0.8310$415.5000
1000$0.7050$705.0000
2000$0.6700$1340.0000
5000$0.6450$3225.0000
10000$0.6240$6240.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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P-Channel 60 V 16A (Tc) 53W (Tc) Surface Mount PowerPAK® 1212-8 Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIRFI530
Continuous Drain Current (ID) @ 25°C9.7A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)33 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)670 pF @ 25 V
MfrVishay Siliconix
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation42W (Tc)
RDS(on) Drain-to-Source On Resistance160mOhm @ 5.8A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3 Full Pack, Isolated Tab
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PCN Design/Specification
Product Drawings
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)