IRFDC20PBFN-Channel 600 V 320mA (Ta) 1W (Ta) Through Hole 4-HVMDIP
1:$1.7540
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRFDC2-66111
ManufacturerVishay Siliconix
MPN #.IRFDC20PBF
Estimated Lead Time-
SampleGet Free Sample
Datasheet
IRFDC20(PDF)
IRFDC20(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 1.7540
Ext. Price$ 1.7540
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.7540$1.7540
10$1.4530$14.5300
100$1.1570$115.7000
500$0.9790$489.5000
1000$0.8300$830.0000
2000$0.7890$1578.0000
5000$0.7590$3795.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Series-
Packaging
Tube
Lifecycle StatusEnd of Life (EOL)
Base Product NumberIRFDC20
Continuous Drain Current (ID) @ 25°C320mA (Ta)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)18 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)350 pF @ 25 V
MfrVishay Siliconix
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1W (Ta)
RDS(on) Drain-to-Source On Resistance4.4Ohm @ 190mA, 10V
Package Type (Mfr.)4-HVMDIP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / Case4-DIP (0.300", 7.62mm)
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Datasheets
PCN Design/Specification
PCN Obsolescence/ EOL
Product Drawings
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)