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IRFBE30LPBFN-Channel 800 V 4.1A (Tc) 125W (Tc) Through Hole I2PAK
1:$2.2050
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRFBE3-67462
ManufacturerVishay Siliconix
MPN #.IRFBE30LPBF
Estimated Lead Time14 Weeks
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In Stock: 692
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 2.2050
Ext. Price$ 2.2050
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.2050$2.2050
50$1.7720$88.6000
100$1.4580$145.8000
500$1.2340$617.0000
1000$1.0460$1046.0000
2000$0.9940$1988.0000
5000$0.9570$4785.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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P-Channel 60 V 16A (Tc) 53W (Tc) Surface Mount PowerPAK® 1212-8 Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIRFBE30
Continuous Drain Current (ID) @ 25°C4.1A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)78 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1300 pF @ 25 V
MfrVishay Siliconix
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation125W (Tc)
RDS(on) Drain-to-Source On Resistance3Ohm @ 2.5A, 10V
Package Type (Mfr.)I2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)