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IRFB18N50KPBFN-Channel 500 V 17A (Tc) 220W (Tc) Through Hole TO-220AB
1:$3.9100
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRFB18-41771
ManufacturerVishay Siliconix
MPN #.IRFB18N50KPBF
Estimated Lead Time-
SampleGet Free Sample
DatasheetIRFB18N50K(PDF)
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In Stock: 674
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 3.9100
Ext. Price$ 3.9100
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.9100$3.9100
50$3.0970$154.8500
100$2.6560$265.6000
500$2.3610$1180.5000
1000$2.0210$2021.0000
2000$1.9030$3806.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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P-Channel 60 V 16A (Tc) 53W (Tc) Surface Mount PowerPAK® 1212-8 Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusEnd of Life (EOL)
Base Product NumberIRFB18
Continuous Drain Current (ID) @ 25°C17A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)120 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2830 pF @ 25 V
MfrVishay Siliconix
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation220W (Tc)
RDS(on) Drain-to-Source On Resistance290mOhm @ 10A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationREACH Details Provided Upon Request
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)