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IRF9Z24SP-Channel 60 V 11A (Tc) 3.7W (Ta), 60W (Tc) Surface Mount TO-263 (D2PAK)

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ABRmicro #.ABR2045-IRF9Z2-10229
ManufacturerVishay Siliconix
MPN #.IRF9Z24S
Estimated Lead Time-
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DatasheetDatasheetIRF9Z24S, SiHF9Z24S(PDF)
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In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIRF9
Continuous Drain Current (ID) @ 25°C11A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)19 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)570 pF @ 25 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.7W (Ta), 60W (Tc)
RDS(on) Drain-to-Source On Resistance280mOhm @ 6.6A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IRF9Z24S, SiHF9Z24S
Product Drawings
IR(F,L,Z) Series Side 1IR(F,L,Z) Series Side 2
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)