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IRF730STRRN-Channel 400 V 5.5A (Tc) 3.1W (Ta), 74W (Tc) Surface Mount TO-263 (D2PAK)

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ABRmicro #.ABR2045-IRF730-15129
ManufacturerVishay Siliconix
MPN #.IRF730STRR
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetIRF730S, SiHF730S(PDF)
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In Stock: 115
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 3, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusActive
Base Product NumberIRF730
Continuous Drain Current (ID) @ 25°C5.5A (Tc)
Drain-to-Source Voltage (VDS)400 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)38 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)700 pF @ 25 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.1W (Ta), 74W (Tc)
RDS(on) Drain-to-Source On Resistance1Ohm @ 3.3A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IRF730S, SiHF730S
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)