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IRF620LN-Channel 200 V 5.2A (Tc) Through Hole I2PAK

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ABRmicro #.ABR2045-IRF620-36671
ManufacturerVishay Siliconix
MPN #.IRF620L
Estimated Lead Time-
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DatasheetDatasheetIRF620(PDF)
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In Stock: 107
Shipped From Shenzhen or Hong Kong Warehouses
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Tube
Shipping DateNovember 6, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIRF620
Continuous Drain Current (ID) @ 25°C5.2A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)14 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)260 pF @ 25 V
MfrVishay Siliconix
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation-
RDS(on) Drain-to-Source On Resistance800mOhm @ 3.1A, 10V
Package Type (Mfr.)I2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
IRF620
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)