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IRF540SPBFN-Channel 100 V 28A (Tc) 3.7W (Ta), 150W (Tc) Surface Mount TO-263 (D2PAK)

1:$1.8180

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRF540-79725
ManufacturerVishay Siliconix
MPN #.IRF540SPBF
Estimated Lead Time14 Weeks
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DatasheetDatasheetIRF540S(PDF)
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In Stock: 1990
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 6, 2024
* Quantity
Unit Price$ 1.8180
Ext. Price$ 1.8180
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.8180$1.8180
50$1.4610$73.0500
100$1.2020$120.2000
500$1.0180$509.0000
1000$0.8640$864.0000
2000$0.8200$1640.0000
5000$0.7890$3945.0000
10000$0.7630$7630.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIRF540
Continuous Drain Current (ID) @ 25°C28A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)72 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1700 pF @ 25 V
MfrVishay Siliconix
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.7W (Ta), 150W (Tc)
RDS(on) Drain-to-Source On Resistance77mOhm @ 17A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationREACH Details Provided Upon Request
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)