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3N163-E3P-Channel 40 V 50mA (Ta) 375mW (Ta) Through Hole TO-72

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ABRmicro #.ABR2045-3N163--180663
ManufacturerVishay Siliconix
MPN #.3N163-E3
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheet3N163,3N164(PDF)
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In Stock: 16
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
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Shipping DateNovember 7, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product Number3N163
Continuous Drain Current (ID) @ 25°C50mA (Ta)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))20V
FET Feature-
FET TypeP-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3.5 pF @ 15 V
MfrVishay Siliconix
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation375mW (Ta)
RDS(on) Drain-to-Source On Resistance250Ohm @ 100µA, 20V
Package Type (Mfr.)TO-72
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 10µA
Package / CaseTO-206AF, TO-72-4 Metal Can
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
3N163,3N164
PCN Assembly/Origin
SIL-062-2014-Rev-0 30/May/2014
PCN Obsolescence/ EOL
Mult Device OBS Update 15/May/2017OBS 17/Mar/2008
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)