2N5433-E3JFET N-Channel 25 V 300 mW Through Hole TO-206AC (TO-52)
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ABRmicro #.ABR288-2N5433-91956
ManufacturerVishay Siliconix
MPN #.2N5433-E3
Estimated Lead Time-
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Datasheet
2N5432 thru 2N5... (PDF)
2N5432 thru 2N5... (PDF)
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Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
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Lifecycle StatusObsolete
Base Product Number2N5433
Drain Current (Iᴅss)@(Vᴅs)(Vɢs=0)100 mA @ 15 V
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)30pF @ 0V
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max300 mW
Package Type (Mfr.)TO-206AC (TO-52)
Gate-Source Breakdown Voltage (V(ʙʀ)ɢss)25 V
Gate-Source Cutoff Voltage (Vɢs(off))@(Iᴅ)3 V @ 3 nA
Package / CaseTO-206AC, TO-52-3 Metal Can
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Environmental Information
PCN Assembly/Origin
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
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The 2N5433-E3 is an N-channel JFET manufactured by Vishay Siliconix, designed for through-hole mounting in a TO-206AC (TO-52) package. It operates with a maximum voltage of 25V and can dissipate up to 300 mW of power. Key electrical characteristics include a total capacitance of 30 pF at 0 volts, a drain current of 100 mA at 15 volts, and a gate-source voltage of 3 V at a gate current of 3 nA. These specifications make it suitable for general-purpose applications requiring a reliable JFET component.
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