2N4416A-E3JFET N-Channel 35 V 300 mW Through Hole TO-206AF (TO-72)
N/A
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ABRmicro #.ABR288-2N4416-23242
ManufacturerVishay Siliconix
MPN #.2N4416A-E3
Estimated Lead Time-
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Datasheet
2N4416(A),SST44... (PDF)
2N4416(A),SST44... (PDF)
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Min.&Mult.1
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Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product Number2N4416
Drain Current (Iᴅss)@(Vᴅs)(Vɢs=0)5 mA @ 15 V
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4pF @ 15V
Mounting StyleThrough Hole
Operating Temperature-50°C ~ 150°C (TJ)
Power - Max300 mW
Package Type (Mfr.)TO-206AF (TO-72)
Gate-Source Breakdown Voltage (V(ʙʀ)ɢss)35 V
Gate-Source Cutoff Voltage (Vɢs(off))@(Iᴅ)2.5 V @ 1 nA
Package / CaseTO-206AF, TO-72-4 Metal Can
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Environmental Information
PCN Assembly/Origin
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
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The 2N4416A-E3, manufactured by Vishay Siliconix, is an N-Channel JFET designed for various electronic applications. It operates at a maximum voltage of 35V and can dissipate up to 300 mW of power. Encased in a TO-206AF (TO-72) through-hole package, it is suitable for compact designs where space is limited. Key electrical characteristics include an input capacitance of 4pF at 15V, a gate-source cut-off voltage of 2.5V at a 1 nA current, and a drain current of 5 mA at 15V. This JFET offers reliable performance with these specified parameters, making it a practical choice for precision analog circuits.
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