2N4416-E3JFET N-Channel 30 V 300 mW Through Hole TO-206AF (TO-72)
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ABRmicro #.ABR288-2N4416-56211
ManufacturerVishay Siliconix
MPN #.2N4416-E3
Estimated Lead Time-
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Datasheet
2N4416(A),SST44... (PDF)
2N4416(A),SST44... (PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product Number2N4416
Drain Current (Iᴅss)@(Vᴅs)(Vɢs=0)5 mA @ 15 V
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4pF @ 15V
Mounting StyleThrough Hole
Operating Temperature-50°C ~ 150°C (TJ)
Power - Max300 mW
Package Type (Mfr.)TO-206AF (TO-72)
Gate-Source Breakdown Voltage (V(ʙʀ)ɢss)30 V
Gate-Source Cutoff Voltage (Vɢs(off))@(Iᴅ)3 V @ 1 nA
Package / CaseTO-206AF, TO-72-4 Metal Can
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
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The 2N4416-E3 is an N-channel junction field-effect transistor (JFET) manufactured by Vishay Siliconix. It is designed for through-hole mounting and comes in a TO-206AF (TO-72) package. The part is capable of handling a voltage of up to 30 V and dissipates power up to 300 mW. It exhibits a low gate-source cutoff voltage of 3 V at 1 nA, has an input capacitance of 4 pF at 15 V, and can conduct a drain current of 5 mA at 15 V. The 2N4416-E3 is a versatile component suitable for various electronic applications requiring small signal amplification and switching.
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