2N4393-E3JFET N-Channel 40 V 1.8 W Through Hole TO-206AA (TO-18)
N/A
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ABRmicro #.ABR288-2N4393-83705
ManufacturerVishay Siliconix
MPN #.2N4393-E3
Estimated Lead Time-
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Datasheet
2N/PN/SST4391-4... (PDF)
2N/PN/SST4391-4... (PDF)
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Min.&Mult.1
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Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product Number2N4393
Drain Current (Iᴅss)@(Vᴅs)(Vɢs=0)5 mA @ 20 V
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)14pF @ 20V
Mounting StyleThrough Hole
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max1.8 W
Drain-Source On Resistance (rᴅs(on))100 Ohms
Package Type (Mfr.)TO-206AA (TO-18)
Gate-Source Breakdown Voltage (V(ʙʀ)ɢss)40 V
Gate-Source Cutoff Voltage (Vɢs(off))@(Iᴅ)500 mV @ 1 nA
Package / CaseTO-206AA, TO-18-3 Metal Can
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Environmental Information
PCN Assembly/Origin
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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The 2N4393-E3 is an N-channel JFET manufactured by Vishay Siliconix. It is designed to handle a maximum voltage of 40 V and dissipate up to 1.8 watts of power. The device is housed in a TO-206AA (TO-18) through-hole package, making it suitable for applications requiring robust connections and compact form factors. It exhibits a gate current of 5 mA at 20 V, a gate-source cut-off voltage drop of 500 mV at 1 nA, and a typical input capacitance of 14 pF at 20 V. These specifications suggest it is tailored for tasks that prioritize low noise and high input impedance.
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