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2N4392JFET N-Channel 40 V 1.8 W Through Hole TO-206AA (TO-18)

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ABRmicro #.ABR288-2N4392-66875
ManufacturerVishay Siliconix
MPN #.2N4392
Estimated Lead Time-
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DatasheetDatasheet2N/PN/SST4391-4... (PDF)
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In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product Number2N4392
Drain Current (Iᴅss)@(Vᴅs)(Vɢs=0)25 mA @ 20 V
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)14pF @ 20V
Mounting StyleThrough Hole
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max1.8 W
Drain-Source On Resistance (rᴅs(on))60 Ohms
Package Type (Mfr.)TO-206AA (TO-18)
Gate-Source Breakdown Voltage (V(ʙʀ)ɢss)40 V
Gate-Source Cutoff Voltage (Vɢs(off))@(Iᴅ)2 V @ 1 nA
Package / CaseTO-206AA, TO-18-3 Metal Can
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
2N/PN/SST4391-4393 Series
Environmental Information
Material ComplianceVishay Aluminum Capacitor and Energy Storage REACH
PCN Assembly/Origin
SIL-062-2014-Rev-0 30/May/2014
PCN Obsolescence/ EOL
Mult Device OBS Update 15/May/2017OBS 17/Mar/2008
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The 2N4392 is a JFET N-Channel transistor manufactured by Vishay Siliconix. This component features a maximum drain-source voltage of 40 volts and a power dissipation of 1.8 watts. Encased in a TO-206AA (TO-18) through-hole package, it is designed for ease of installation on printed circuit boards. The JFET exhibits an input capacitance of 14pF at 20 volts and has an on-state resistance of 60 ohms. It operates with a gate-source cutoff voltage of 2 volts at a drain current of 1 nA, making it suitable for various electronic switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.