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2N4392-2JFET N-Channel 40 V 1.8 W Through Hole TO-206AA (TO-18)
N/A
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ABRmicro #.ABR288-2N4392-18977
ManufacturerVishay Siliconix
MPN #.2N4392-2
Estimated Lead Time-
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Datasheet2N/PN/SST4391-4... (PDF)
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In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
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Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product Number2N4392
Drain Current (Iᴅss)@(Vᴅs)(Vɢs=0)25 mA @ 20 V
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)14pF @ 20V
Mounting StyleThrough Hole
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max1.8 W
Drain-Source On Resistance (rᴅs(on))60 Ohms
Package Type (Mfr.)TO-206AA (TO-18)
Gate-Source Breakdown Voltage (V(ʙʀ)ɢss)40 V
Gate-Source Cutoff Voltage (Vɢs(off))@(Iᴅ)2 V @ 1 nA
Package / CaseTO-206AA, TO-18-3 Metal Can
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Environmental Information
PCN Assembly/Origin
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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The 2N4392-2, manufactured by Vishay Siliconix, is a through-hole JFET N-Channel transistor housed in a TO-206AA (commonly referred to as TO-18) package. It is designed to handle a maximum drain-source voltage of 40 V and dissipate up to 1.8 watts of power. The device allows a maximum continuous drain current of 25 mA at a gate-source voltage of 20 V. It features a forward transfer admittance of 60 ohms and offers gate-source cutoff voltage specifics of around 2 V at 1 nA. This JFET is suitable for general-purpose amplification and switching tasks requiring these electrical characteristics.
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