2N4338JFET N-Channel 50 V 300 mW Through Hole TO-206AA (TO-18)
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ABRmicro #.ABR288-2N4338-20135
ManufacturerVishay Siliconix
MPN #.2N4338
Estimated Lead Time-
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Datasheet
2N4338 thru 2N4... (PDF)
2N4338 thru 2N4... (PDF)
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Min.&Mult.1
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Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product Number2N4338
Drain Current (Iᴅss)@(Vᴅs)(Vɢs=0)200 µA @ 15 V
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7pF @ 15V
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Power - Max300 mW
Package Type (Mfr.)TO-206AA (TO-18)
Gate-Source Breakdown Voltage (V(ʙʀ)ɢss)50 V
Gate-Source Cutoff Voltage (Vɢs(off))@(Iᴅ)300 mV @ 100 nA
Package / CaseTO-206AA, TO-18-3 Metal Can
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
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The 2N4338 is a N-Channel JFET transistor manufactured by Vishay Siliconix. It features a maximum drain-source voltage of 50 V and is capable of dissipating up to 300 mW of power. Encased in a TO-206AA (TO-18) through-hole package, it offers a transition capacitance of 7 pF at 15 V, a gate-source cutoff voltage of 300 mV at 100 nA, and a drain current of 200 µA at 15 V. This component is designed to provide reliable performance in various electronic circuits requiring efficient voltage control and amplification.
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