2N4338-2JFET N-Channel 50 V 300 mW Through Hole TO-206AA (TO-18)
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ABRmicro #.ABR288-2N4338-87757
ManufacturerVishay Siliconix
MPN #.2N4338-2
Estimated Lead Time-
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Datasheet
2N4338 thru 2N4... (PDF)
2N4338 thru 2N4... (PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
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Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product Number2N4338
Drain Current (Iᴅss)@(Vᴅs)(Vɢs=0)200 µA @ 15 V
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7pF @ 15V
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Power - Max300 mW
Package Type (Mfr.)TO-206AA (TO-18)
Gate-Source Breakdown Voltage (V(ʙʀ)ɢss)50 V
Gate-Source Cutoff Voltage (Vɢs(off))@(Iᴅ)300 mV @ 100 nA
Package / CaseTO-206AA, TO-18-3 Metal Can
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
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The 2N4338-2 is an N-channel JFET manufactured by Vishay Siliconix. This component is designed for through-hole mounting and comes in a TO-206AA (TO-18) package. It operates at a maximum voltage of 50 V and is capable of dissipating up to 300 mW of power. The device exhibits a gate-source cutoff voltage of 300 mV at a gate current of 100 nA. Additionally, it has a capacitance of 7 pF when measured at 15 V, and a drain current of 200 µA at the same voltage. The 2N4338-2 is suitable for applications requiring stable low-power performance with these specific electrical parameters.
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