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2N4118A-2JFET N-Channel 40 V 300 mW Through Hole TO-206AF (TO-72)

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ABRmicro #.ABR288-2N4118-89015
ManufacturerVishay Siliconix
MPN #.2N4118A-2
Estimated Lead Time-
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In Stock: 7
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
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Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product Number2N4118
Drain Current (Iᴅss)@(Vᴅs)(Vɢs=0)80 µA @ 10 V
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3pF @ 10V
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Power - Max300 mW
Package Type (Mfr.)TO-206AF (TO-72)
Gate-Source Breakdown Voltage (V(ʙʀ)ɢss)40 V
Gate-Source Cutoff Voltage (Vɢs(off))@(Iᴅ)1 V @ 1 nA
Package / CaseTO-206AF, TO-72-4 Metal Can
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
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Additional Details
The 2N4118A-2 is a JFET N-Channel transistor manufactured by Vishay Siliconix. It is designed to handle a maximum voltage of 40 V and a power dissipation of 300 mW, making it suitable for moderate power applications. The component comes in a TO-206AF (TO-72) through-hole package, facilitating easy integration into various electronic circuits. Key electrical characteristics include a gate-source voltage of 1 V at 1 nA, a drain current of 80 µA at 10 V, and an input capacitance of 3 pF at 10 V, which indicate its performance in terms of conduction and capacitance.
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