SPW35N60C3FKSA1N-Channel 650 V 34.6A (Tc) 313W (Tc) Through Hole PG-TO247-3-1
1:$8.9140
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SPW35N-923984
ManufacturerInfineon Technologies
MPN #.SPW35N60C3FKSA1
Estimated Lead Time15 Weeks
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Datasheet
SPW35N60C3(PDF)
SPW35N60C3(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 13, 2024
* Quantity
Unit Price$ 8.9140
Ext. Price$ 8.9140
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$8.9140$8.9140
30$7.1170$213.5100
120$6.3680$764.1600
510$5.6180$2865.1800
1020$5.0570$5158.1400
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSPW35N60
Continuous Drain Current (ID) @ 25°C34.6A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)200 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4500 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation313W (Tc)
RDS(on) Drain-to-Source On Resistance100mOhm @ 21.9A, 10V
Package Type (Mfr.)PG-TO247-3-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.9V @ 1.9mA
Package / CaseTO-247-3
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Datasheets
Environmental Information
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)