IMZA65R027M1HXKSA1N-Channel 650 V 59A (Tc) 189W (Tc) Through Hole PG-TO247-4-3
1:$15.4470
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ABRmicro #.ABR278-IMZA65-9469
ManufacturerInfineon Technologies
MPN #.IMZA65R027M1HXKSA1
Estimated Lead Time26 Weeks
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Datasheet
IMZA65R027M1H (PDF)
IMZA65R027M1H (PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 23, 2024
* Quantity
Unit Price$15.4470
Ext. Price$15.4470
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$15.4470$15.4470
30$12.5080$375.2330
120$11.7730$1412.7000
510$10.6690$5440.9670
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesCoolSiC™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIMZA65
Continuous Drain Current (ID) @ 25°C59A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))18V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)63 nC @ 18 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2131 pF @ 400 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation189W (Tc)
RDS(on) Drain-to-Source On Resistance34mOhm @ 38.3A, 18V
Package Type (Mfr.)PG-TO247-4-3
TechnologySiCFET (Silicon Carbide)
Gate-to-Source Voltage (Vɢs)+23V, -5V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.7V @ 11mA
Package / CaseTO-247-4
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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The component identified as IMZA65R027M1HXKSA1 is an N-Channel power MOSFET manufactured by Infineon Technologies. It is designed to handle a maximum voltage of 650 V and a current of 59 A under specified conditions (Tc). With a power dissipation rating of 189 W, this MOSFET is suitable for high-power applications. The device comes in a through-hole PG-TO247-4-3 package, making it well-suited for mounting on circuit boards. It features a gate threshold voltage range of +23 V to -5 V with a typical driving voltage of 18 V and supports a gate charge of 5.7 V at 11 mA.
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