IPS60R1K0PFD7SAKMA1N-Channel 650 V 4.7A (Tc) 26W (Tc) Through Hole PG-TO251-3
1:$0.3040
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ABRmicro #.ABR278-IPS60R-53551
ManufacturerInfineon Technologies
MPN #.IPS60R1K0PFD7SAKMA1
Estimated Lead Time-
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Datasheet
IPS60R1K0PFD7S (PDF)
IPS60R1K0PFD7S (PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 24, 2024
* Quantity
Unit Price$0.3040
Ext. Price$0.3040
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1500$0.3040$455.8130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesCoolMOS™PFD7
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPS60R1
Continuous Drain Current (ID) @ 25°C4.7A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)6 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)230 pF @ 400 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation26W (Tc)
RDS(on) Drain-to-Source On Resistance1Ohm @ 1A, 10V
Package Type (Mfr.)PG-TO251-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 50µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Additional Details
The IPS60R1K0PFD7SAKMA1 by Infineon Technologies is an N-Channel MOSFET designed for efficient power management and switching applications. This component can handle a maximum voltage of 650 V and a continuous current of 4.7A when mounted on a temperature-controlled (Tc) environment. It offers a power dissipation capacity of 26W under similar thermal conditions. The MOSFET is encased in a compact PG-TO251-3 through-hole package, making it suitable for various circuit designs. It features a gate charge of 6 nC at 10 V and can tolerate a gate-to-source voltage of up to ±20V, providing reliable performance in high-voltage applications.
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