IPS60R210PFD7SAKMA1N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3
1:$0.6960
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-IPS60R-54852
ManufacturerInfineon Technologies
MPN #.IPS60R210PFD7SAKMA1
Estimated Lead Time-
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Datasheet
IPS60R210PFD7S (PDF)
IPS60R210PFD7S (PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 24, 2024
* Quantity
Unit Price$0.6960
Ext. Price$0.6960
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1500$0.6960$1043.9060
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesCoolMOS™PFD7
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPS60R
Continuous Drain Current (ID) @ 25°C16A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)23 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1015 pF @ 400 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation64W (Tc)
RDS(on) Drain-to-Source On Resistance210mOhm @ 4.9A, 10V
Package Type (Mfr.)PG-TO251-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 240µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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N-Channel 650 V 4.7A (Tc) 26W (Tc) Through Hole PG-TO251-3 Additional Details
The IPS60R210PFD7SAKMA1 is a power MOSFET manufactured by Infineon Technologies, designed for high-voltage applications. This N-channel MOSFET features a breakdown voltage of 650 V and a continuous drain current of 16A, with a maximum power dissipation of 64W when mounted properly to manage thermal conditions. It comes in a PG-TO251-3 through-hole package, providing a low on-state resistance of 210mOhm at a gate-to-source voltage of 10V and a drain current of 4.9A. The device offers robust performance with a gate-source voltage tolerance of ±20V. Its construction caters to efficient conduction and switching, ensuring reliability in handling power loads.
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