IMW65R072M1HXKSA1N-Channel 650 V 26A (Tc) 96W (Tc) Through Hole PG-TO247-3-41
1:$8.2660
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ABRmicro #.ABR278-IMW65R-54316
ManufacturerInfineon Technologies
MPN #.IMW65R072M1HXKSA1
Estimated Lead Time26 Weeks
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Datasheet
IMW65R072M1H (PDF)
IMW65R072M1H (PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 24, 2024
* Quantity
Unit Price$8.2660
Ext. Price$8.2660
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$8.2660$8.2660
30$6.5980$197.9440
120$5.9030$708.3900
510$5.2090$2656.8130
1020$4.6880$4781.5050
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesCoolSIC™ M1
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIMW65R072
Continuous Drain Current (ID) @ 25°C26A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))18V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)22 nC @ 18 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)744 pF @ 400 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation96W (Tc)
RDS(on) Drain-to-Source On Resistance94mOhm @ 13.3A, 18V
Package Type (Mfr.)PG-TO247-3-41
TechnologySiCFET (Silicon Carbide)
Gate-to-Source Voltage (Vɢs)+23V, -5V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.7V @ 4mA
Package / CaseTO-247-3
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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The IMW65R072M1HXKSA1, manufactured by Infineon Technologies, is an N-Channel SiCFET (Silicon Carbide Field-Effect Transistor) designed to handle a maximum voltage of 650 volts and a current of 26 amperes (Tc). This component is encapsulated in a PG-TO247-3-41 through-hole package, making it suitable for mounting on printed circuit boards. It features an on-state resistance of 94 milliohms at a current of 13.3A and a gate-source voltage of 18V. The gate threshold voltage stands at 5.7V with a gate current of 4mA, and the device can dissipate power up to 96 watts under specified conditions.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.