IPD60R1K5PFD7SAUMA1N-Channel 600 V 3.6A (Tc) 22W (Tc) Surface Mount PG-TO252-3-344
1:$0.6420
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-IPD60R-35514
ManufacturerInfineon Technologies
MPN #.IPD60R1K5PFD7SAUMA1
Estimated Lead Time17 Weeks
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Datasheet
IPD60R1K5PFD7S (PDF)
IPD60R1K5PFD7S (PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 24, 2024
* Quantity
Unit Price$0.6420
Ext. Price$0.6420
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.6420$0.6420
10$0.5550$5.5460
100$0.3840$38.3560
500$0.3210$160.4380
1000$0.2730$273.0630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesCoolMOS™ PFD7
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIPD60R
Continuous Drain Current (ID) @ 25°C3.6A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)4.6 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)169 pF @ 400 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation22W (Tc)
RDS(on) Drain-to-Source On Resistance1.5Ohm @ 700mA, 10V
Package Type (Mfr.)PG-TO252-3-344
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 40µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Additional Details
The IPD60R1K5PFD7SAUMA1 is a surface-mount N-Channel MOSFET manufactured by Infineon Technologies, encapsulated in a PG-TO252-3-344 package. It is designed to handle a voltage of 600 V and a current of 3.6 A at the case temperature (Tc). The MOSFET features a power dissipation capacity of 22W (Tc) and exhibits a gate charge of 4.6 nC at 10 V, along with an input capacitance of 169 pF at 400 V. These characteristics make it suitable for efficient electrical switching and amplification functions in various settings.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.