IPAN60R125PFD7SXKSA1N-Channel 650 V 25A (Tc) 32W (Tc) Through Hole PG-TO220-FP
1:$2.2480
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-IPAN60-29298
ManufacturerInfineon Technologies
MPN #.IPAN60R125PFD7SXKSA1
Estimated Lead Time17 Weeks
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Datasheet
IPAN60R125PFD7S (PDF)
IPAN60R125PFD7S (PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 23, 2024
* Quantity
Unit Price$2.2480
Ext. Price$2.2480
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.2480$2.2480
50$1.8080$90.4190
100$1.4880$148.7500
500$1.2590$629.5310
1000$1.0680$1067.8130
2000$1.0150$2029.3750
5000$0.9760$4882.1880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesCoolMOS™PFD7
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIPAN60
Continuous Drain Current (ID) @ 25°C25A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)36 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1503 pF @ 400 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation32W (Tc)
RDS(on) Drain-to-Source On Resistance125mOhm @ 7.8A, 10V
Package Type (Mfr.)PG-TO220-FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 390µA
Package / CaseTO-220-3 Full Pack
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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The IPAN60R125PFD7SXKSA1 is an N-Channel MOSFET produced by Infineon Technologies. It is designed to handle a maximum voltage of 650V and a continuous current of 25A at case temperature Tc. This MOSFET is housed in a PG-TO220-FP through-hole package, providing a power dissipation capability of 32W at Tc. The device has a gate-source voltage rating of ±20V and operates efficiently with a typical gate threshold voltage of 10V. Its structure allows for effective thermal management and reliability in high-voltage switching applications.
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