SPW24N60C3FKSA1N-Channel 650 V 24.3A (Tc) 240W (Tc) Through Hole PG-TO247-3-1
1:$5.5560
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SPW24N-927315
ManufacturerInfineon Technologies
MPN #.SPW24N60C3FKSA1
Estimated Lead Time15 Weeks
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Datasheet
SPW24N60C3(PDF)
SPW24N60C3(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 5.5560
Ext. Price$ 5.5560
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$5.5560$5.5560
50$4.4380$221.9030
100$3.9720$397.1630
500$3.5040$1752.0630
1000$3.1540$3153.5000
2000$2.9560$5911.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSPW24N60
Continuous Drain Current (ID) @ 25°C24.3A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)135 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3000 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation240W (Tc)
RDS(on) Drain-to-Source On Resistance160mOhm @ 15.4A, 10V
Package Type (Mfr.)PG-TO247-3-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.9V @ 1.2mA
Package / CaseTO-247-3
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Datasheets
Environmental Information
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The SPW24N60C3FKSA1 is a semiconductor component manufactured by Infineon Technologies, designed as an N-channel MOSFET with a voltage rating of 650 V and a current capacity of 24.3 A when connected through a specific case temperature (Tc). It offers a power dissipation of 240 W at the same Tc. Housed in a PG-TO247-3-1 through-hole package, this MOSFET features a gate-source voltage of ±20V and operates effectively with a gate threshold voltage of 10V. The metal-oxide-semiconductor (MOS) technology endows it with efficient switching capabilities, ideal for high-voltage and high-frequency operations.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.