SPU07N60C3BKMA1N-Channel 650 V 7.3A (Tc) 83W (Tc) Through Hole PG-TO251-3-21
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ABRmicro #.ABR2045-SPU07N-1003823
ManufacturerInfineon Technologies
MPN #.SPU07N60C3BKMA1
Estimated Lead Time-
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Datasheet
SP(D,U)07N60C3(PDF)
SP(D,U)07N60C3(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSPU07N
Continuous Drain Current (ID) @ 25°C7.3A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)27 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)790 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation83W (Tc)
RDS(on) Drain-to-Source On Resistance600mOhm @ 4.6A, 10V
Package Type (Mfr.)PG-TO251-3-21
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.9V @ 350µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Datasheets
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The SPU07N60C3BKMA1 is a semiconductor device manufactured by Infineon Technologies, featuring an N-Channel MOSFET structure. It is designed to handle a maximum voltage of 650 V and a current of 7.3A when appropriately cooled, with a power dissipation rating of 83W. The device comes in a Through Hole PG-TO251-3-21 package, facilitating straightforward installation onto circuit boards. It operates with gate-source voltages of 10V and can handle up to ±20V, with a total gate charge of 27 nC at 10 V.
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