SPS04N60C3BKMA1N-Channel 650 V 4.5A (Tc) 50W (Tc) Through Hole PG-TO251-3-11
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ABRmicro #.ABR2045-SPS04N-1022933
ManufacturerInfineon Technologies
MPN #.SPS04N60C3BKMA1
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Datasheet
SPS04N60C3(PDF)
SPS04N60C3(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSPS04N
Continuous Drain Current (ID) @ 25°C4.5A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)25 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)490 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation50W (Tc)
RDS(on) Drain-to-Source On Resistance950mOhm @ 2.8A, 10V
Package Type (Mfr.)PG-TO251-3-11
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.9V @ 200µA
Package / CaseTO-251-3 Stub Leads, IPAK
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The SPS04N60C3BKMA1 is a semiconductor device manufactured by Infineon Technologies, featuring an N-Channel configuration. It is designed to handle a voltage of up to 650 V and a current of 4.5A under specified thermal conditions. The component can dissipate up to 50W of power through its PG-TO251-3-11 package type, which facilitates through-hole mounting. It has a capacitance of 490 pF at 25 V and a gate threshold voltage of approximately 3.9V when a current of 200µA is applied, operating effectively up to a gate-source voltage of 10V.
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