SPP24N60CFDHKSA1N-Channel 650 V 21.7A (Tc) 240W (Tc) Through Hole PG-TO220-3-1
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ABRmicro #.ABR2045-SPP24N-920042
ManufacturerInfineon Technologies
MPN #.SPP24N60CFDHKSA1
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Datasheet
SPP24N60CFD(PDF)
SPP24N60CFD(PDF)
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Packaging
Tube
Shipping DateNovember 15, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSPP24N
Continuous Drain Current (ID) @ 25°C21.7A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)143 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3160 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation240W (Tc)
RDS(on) Drain-to-Source On Resistance185mOhm @ 15.4A, 10V
Package Type (Mfr.)PG-TO220-3-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 1.2mA
Package / CaseTO-220-3
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The SPP24N60CFDHKSA1 is a power MOSFET designed by Infineon Technologies. It features an N-channel configuration with a voltage rating of 650 V and can handle a continuous current of up to 21.7A. This component is capable of managing a power dissipation of 240W. Packaged in a PG-TO220-3-1 through-hole format, the MOSFET has a gate charge capacity of 3160 pF at 25 V, with a gate threshold voltage of 10V. It is designed for efficient power management within specified electrical parameters, making it suitable for various high-voltage applications.
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