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SPP100N08S2L-07N-Channel 75 V 100A (Tc) 300W (Tc) Through Hole PG-TO220-3-1

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ABRmicro #.ABR2045-SPP100-1034269
MPN #.SPP100N08S2L-07
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In Stock: 12
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Tube
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesOptiMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSPP100N
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)75 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)246 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7130 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance6.8mOhm @ 68A, 10V
Package Type (Mfr.)PG-TO220-3-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-220-3
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The SPP100N08S2L-07 is an N-Channel MOSFET manufactured by Infineon Technologies, designed for efficient power management. It is capable of handling a drain-source voltage of up to 75 volts and supports a continuous drain current of 100 amperes when the case temperature is maintained optimally. The part is housed in a PG-TO220-3-1 package, allowing for through-hole mounting, and boasts a high power dissipation capacity of 300 watts. With a gate threshold voltage of 2 volts at a gate current of 250 microamperes, this MOSFET offers reliable performance in various electronic circuits.
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