SPP08P06PBKSA1P-Channel 60 V 8.8A (Tc) 42W (Tc) Through Hole PG-TO220-3
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ABRmicro #.ABR2045-SPP08P-938942
ManufacturerInfineon Technologies
MPN #.SPP08P06PBKSA1
Estimated Lead Time-
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Datasheet
SPP,SPB08P06P(PDF)
SPP,SPB08P06P(PDF)
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Packaging
Tube
Shipping DateNovember 15, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesSIPMOS®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSPP08P
Continuous Drain Current (ID) @ 25°C8.8A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)15 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)420 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation42W (Tc)
RDS(on) Drain-to-Source On Resistance300mOhm @ 6.2A, 10V
Package Type (Mfr.)PG-TO220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Infineon Technologies SPP08P06PBKSA1 is a P-Channel MOSFET designed for electrical applications requiring efficient power management. It operates with a maximum voltage of 60 V and can handle a current of up to 8.8A through its through-hole PG-TO220-3 package. The component is characterized by a low on-resistance of 300mOhm when conducting a current of 6.2A at 10V. Additionally, it features a gate charge of 15 nC at 10 V and an input capacitance of 420 pF at 25 V, optimizing it for rapid switching and performance in various electronic circuits. With a power dissipation capacity of 42W when properly heat-sinked, the SPP08P06PBKSA1 is a robust solution in managing power efficiently for suitable systems.
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