SPP04N80C3XKSA1N-Channel 800 V 4A (Tc) 63W (Tc) Through Hole PG-TO220-3
1:$1.4110
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SPP04N-988176
ManufacturerInfineon Technologies
MPN #.SPP04N80C3XKSA1
Estimated Lead Time15 Weeks
SampleGet Free Sample
Datasheet
SPP04N80C3(PDF)
SPP04N80C3(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.4110
Ext. Price$ 1.4110
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.4110$1.4110
50$1.1310$56.5250
100$0.9300$92.9690
500$0.7860$393.1250
1000$0.6670$667.2500
2000$0.6340$1268.6250
5000$0.6110$3054.6880
10000$0.5910$5907.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberSPP04N80
Continuous Drain Current (ID) @ 25°C4A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)31 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)570 pF @ 100 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation63W (Tc)
RDS(on) Drain-to-Source On Resistance1.3Ohm @ 2.5A, 10V
Package Type (Mfr.)PG-TO220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.9V @ 240µA
Package / CaseTO-220-3
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Datasheets
Environmental Information
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Infineon Technologies part SPP04N80C3XKSA1 is a discrete N-Channel MOSFET designed for high voltage switching applications. It features a drain-source voltage rating of 800 volts and can handle a continuous drain current of 4 amperes, with a power dissipation of 63 watts when mounted on a suitable heat sink. This MOSFET is housed in a through-hole PG-TO220-3 package, making it suitable for standard assembly processes. It exhibits an input capacitance of 570 pF at 100 volts, a total gate charge of 31 nC at 10 volts, and a gate-source threshold voltage of approximately 3.9 volts at a gate current of 240 microamperes.
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