SPP04N60S5BKSA1N-Channel 600 V 4.5A (Tc) 50W (Tc) Through Hole PG-TO220-3-1
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ABRmicro #.ABR2045-SPP04N-1000839
ManufacturerInfineon Technologies
MPN #.SPP04N60S5BKSA1
Estimated Lead Time-
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Datasheet
SPP04N60S5(PDF)
SPP04N60S5(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSPP04N
Continuous Drain Current (ID) @ 25°C4.5A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)22.9 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)580 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation50W (Tc)
RDS(on) Drain-to-Source On Resistance950mOhm @ 2.8A, 10V
Package Type (Mfr.)PG-TO220-3-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.5V @ 200µA
Package / CaseTO-220-3
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The SPP04N60S5BKSA1 from Infineon Technologies is an N-channel metal-oxide-semiconductor field-effect transistor (MOSFET) designed for high voltage applications, supporting a maximum drain-source voltage of 600 V and a continuous drain current of 4.5 A at case temperature (Tc). It comes in a PG-TO220-3-1 through-hole package, facilitating efficient heat dissipation with a power dissipation rating of 50 W at Tc. This MOSFET features a threshold voltage of 5.5 V at 200 µA and an on-state resistance of 950 mOhms when sustaining a drain current of 2.8 A with a gate-source voltage of 10 V. Additionally, it possesses an input capacitance of 580 pF at 25 V, contributing to its switching performance.
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