SPP04N60C3XKSA1N-Channel 600 V 4.5A (Tc) 50W (Tc) Through Hole PG-TO220-3
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ABRmicro #.ABR2045-SPP04N-929672
ManufacturerInfineon Technologies
MPN #.SPP04N60C3XKSA1
Estimated Lead Time-
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Datasheet
SPP04N60C3, SPA04N60C3(PDF)
SPP04N60C3, SPA04N60C3(PDF)
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Packaging
Tube
Shipping DateNovember 15, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSPP04N60
Continuous Drain Current (ID) @ 25°C4.5A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)25 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)490 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation50W (Tc)
RDS(on) Drain-to-Source On Resistance950mOhm @ 2.8A, 10V
Package Type (Mfr.)PG-TO220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.9V @ 200µA
Package / CaseTO-220-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The SPP04N60C3XKSA1, manufactured by Infineon Technologies, is an N-Channel MOSFET designed for high-voltage applications with a maximum voltage rating of 600 V and a current capacity of 4.5A when measured at the case temperature (Tc). It dissipates power up to 50W under similar conditions. Packaged in a PG-TO220-3 through-hole configuration, this MOSFET features a capacitance of 490 pF at 25 V, with an on-resistance of 950 milliohms when carrying 2.8A of current at a gate-source voltage of 10V. These characteristics support efficient switching performance in its specified electrical parameters.
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