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SPP04N50C3HKSA1N-Channel 560 V 4.5A (Tc) 50W (Tc) Through Hole PG-TO220-3-1
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ABRmicro #.ABR2045-SPP04N-971320
ManufacturerInfineon Technologies
MPN #.SPP04N50C3HKSA1
Estimated Lead Time-
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DatasheetSP(P,A)04N50C3(PDF)
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In Stock: 18
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSPP04N
Continuous Drain Current (ID) @ 25°C4.5A (Tc)
Drain-to-Source Voltage (VDS)560 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)22 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)470 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation50W (Tc)
RDS(on) Drain-to-Source On Resistance950mOhm @ 2.8A, 10V
Package Type (Mfr.)PG-TO220-3-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.9V @ 200µA
Package / CaseTO-220-3
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The SPP04N50C3HKSA1 is an N-channel power MOSFET manufactured by Infineon Technologies. It is designed to handle a maximum voltage of 560 V and a continuous current of 4.5A at case temperature (Tc). With a power dissipation capacity of 50W, this MOSFET is encapsulated in a robust PG-TO220-3-1 through-hole package. The device showcases a gate threshold voltage of 3.9V at 200µA and operates efficiently with a gate-source voltage of 10V. Additionally, it features an input capacitance of 470 pF at 25 V. This configuration makes it suitable for controlling large power loads efficiently while ensuring thermal stability and electrical performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.