SPP03N60S5XKSA1N-Channel 600 V 3.2A (Tc) 38W (Tc) Through Hole PG-TO220-3-1
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ABRmicro #.ABR2045-SPP03N-1008709
ManufacturerInfineon Technologies
MPN #.SPP03N60S5XKSA1
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Datasheet
SPP03N60S5(PDF)
SPP03N60S5(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSPP03N
Continuous Drain Current (ID) @ 25°C3.2A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)16 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)420 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation38W (Tc)
RDS(on) Drain-to-Source On Resistance1.4Ohm @ 2A, 10V
Package Type (Mfr.)PG-TO220-3-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.5V @ 135µA
Package / CaseTO-220-3
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The SPP03N60S5XKSA1 is an N-channel MOSFET produced by Infineon Technologies. It is designed to handle a maximum voltage of 600 V and a current of up to 3.2 A under specific conditions (Tc). The transistor comes in a PG-TO220-3-1 package, suitable for through-hole mounting, and it is capable of dissipating 38 W (Tc). With a gate voltage rating of ±20 V and a standard gate-source voltage of 10 V, this MOSFET has an on-state resistance of 1.4 Ohms at a drain current of 2 A with a gate voltage of 10 V.
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