SPN02N60C3N-Channel 650 V 400mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
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ABRmicro #.ABR2045-SPN02N-1014733
ManufacturerInfineon Technologies
MPN #.SPN02N60C3
Estimated Lead Time-
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Datasheet
SPN02N60C3(PDF)
SPN02N60C3(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberSPN02N
Continuous Drain Current (ID) @ 25°C400mA (Ta)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)13 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)200 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.8W (Ta)
RDS(on) Drain-to-Source On Resistance2.5Ohm @ 1.1A, 10V
Package Type (Mfr.)PG-SOT223-4
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.9V @ 80µA
Package / CaseTO-261-4, TO-261AA
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The SPN02N60C3 is a surface mount N-Channel MOSFET manufactured by Infineon Technologies, designed to handle a voltage of up to 650 V and a current of 400 mA at standard ambient temperature (Ta). It is housed in a compact PG-SOT223-4 package, offering a power dissipation capacity of 1.8W at Ta. The device features a gate-source voltage rating of ±20V and a threshold voltage of 3.9V at a gate current of 80µA, making it suitable for switching tasks in constrained spaces.
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