SPI80N10LN-Channel 100 V 80A (Tc) 250W (Tc) Through Hole PG-TO262-3-1
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ABRmicro #.ABR2045-SPI80N-1020564
ManufacturerInfineon Technologies
MPN #.SPI80N10L
Estimated Lead Time-
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Datasheet
SPI,SPP80N10L(PDF)
SPI,SPP80N10L(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesSIPMOS®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSPI80N
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)240 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4540 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation250W (Tc)
RDS(on) Drain-to-Source On Resistance14mOhm @ 58A, 10V
Package Type (Mfr.)PG-TO262-3-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 2mA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The SPI80N10L is a MOSFET produced by Infineon Technologies, featuring an N-Channel configuration and designed for a maximum voltage of 100 V and a continuous current of 80 A at its case temperature (Tc). It offers a power dissipation capability of 250 W and comes in a PG-TO262-3-1 through-hole package. This part has a gate threshold voltage of 2V at a gate current of 2mA, and a total gate charge of 240 nC when driven at 10 V, indicating its efficiency in switching applications.
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